• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, in which fine powder is dispersed in a contact hole and heat treated, so that the contact can be buried efficiently, and the metal wiring can be simultaneously formed with the contact buried, and a slight magnetic field and vibration are applied. By providing a metal wiring or a barrier metal layer can be formed to improve the characteristics of the device is proposed a metal wiring forming method of a semiconductor device.
    公开号:KR19980054455A
    申请号:KR1019960073618
    申请日:1996-12-27
    公开日:1998-09-25
    发明作者:김우현；이상화
    申请人:김영환；현대전자산업 주식회사；
    IPC主号:
    专利说明:

    Metal wiring formation method of semiconductor device
    BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for forming metal wiring of a semiconductor device.
    Metallization processes in semiconductor devices play a very important role in the reliability and speed of their operation. Metal wiring is connected to contact holes in a device, which is very important for the reliability of the device, and many technologies are applied to filling such contact holes. Currently, PVD and CVD are used to connect metal wires. However, there are many limitations in the contact filling by PVD method, which is used up to 64M DRAM level, but the limit of deposition is shown in 256M DRAM. In addition, in the case of the CVD method, there is no limit in contact filling, but its application is limited, and various problems such as contamination due to the source have to be improved.
    Accordingly, an object of the present invention is to provide a method for forming metal wirings using fine powder to solve the problems of conventional CVD and PVD processes.
    The first embodiment according to the present invention for achieving the above object is to disperse the fine powder in the contact hole and wiring necessary in the device, and to heat-treat the fine powder to the temperature of the melting point to form a metal film And cooling the metal film to form metal wires.
    In addition, according to the second embodiment of the present invention, after forming a contact hole in a device, forming a metal wiring on the entire structure including the contact hole, dispersing fine powder in the contact hole, and After the powder is embedded in the contact hole to form a plug, characterized in that the step of forming a metal layer on the plug and the metal wiring.
    1A to 1C are cross-sectional views of devices sequentially shown for explaining the first embodiment of the method for forming metal wirings using fine powder according to the present invention.
    2A to 2C are cross-sectional views of devices sequentially shown to explain a second embodiment of the method for forming metal wirings using fine powder according to the present invention.
    * Description of the symbols for the main parts of the drawings *
    11, 21: semiconductor substrate 12, 22: insulating film
    13, 23: contact hole 14, 25: fine powder
    15 metal film 16, 24 metal wiring or barrier metal layer
    26 plug 27 metal layer
    Currently, there are many problems in contact filling due to the high integration of semiconductor devices, and various methods are used to solve this problem. In the present invention, by using a fine powder (fine powder) in order to improve the characteristics of the contact hole (fill hole) filling in the contact hole using a powder finer than the size (size) of the contact hole through heat treatment It is a method of forming wiring. Unlike the sputter method, it reduces the straightness and fills the contact hole and heats it to the melting point temperature, thereby reducing the overhang problem caused by sputtering during the wiring forming process. Effective for landfill In addition, unlike CVD method, since fine powder is used directly without source gas, various problems caused by source gas or reducing gas can be reduced. In addition, the heat treatment for forming the wiring can be simultaneously performed in the existing process, so that it is effective in improving throughput and has a characteristic of simplifying the subsequent process.
    Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.
    1A to 1C are cross-sectional views of devices sequentially shown to explain a first embodiment of a method for forming metal wirings using fine powder according to the present invention. As illustrated in FIG. 1A, an insulating layer 12 is formed on the semiconductor substrate 11, and a selected region of the insulating layer 12 is etched to form a contact hole 13. Fine powder 14 is dispersed in the formed contact hole 13 and a portion necessary for wiring. Contact filling of fine powder makes it easier for the fine powder to adhere to the bottom and walls in the contact hole for metals that act as barriers and to create a slight magnetic field to prevent the powder from detaching. To be deposited to an appropriate thickness. Metal wiring also vibrates to achieve perfect filling. In addition, the powder formed outside the contact hole may be a particle, but a complete layer may be formed through deposition using a sputter method of the same metal layer.
    FIG. 1B shows the fine powder 14 filled in the contact hole and dispersed in a portion required for wiring to be heat-treated to a temperature of a melting point so as to increase the solidification of the metal wiring to form a metal film 15. It is a cross section.
    FIG. 1C is a cross-sectional view of a complete metal wiring 16 formed by cooling a metal film formed by melting powder.
    2A to 2C are cross-sectional views of devices sequentially illustrated to describe a second embodiment of a method for forming metal wirings using fine powder according to the present invention.
    As shown in FIG. 2A, an insulating film 22 is formed on the semiconductor substrate 21, and a selected region of the insulating film 22 is etched to form a contact hole 23. Metal wires 24 are formed on the formed contact holes 23 and the insulating film. The process up to this time can be formed using an existing process, and can also be formed using a metal wiring forming method using fine powder according to the present invention described with reference to FIGS. 1A to 1C. The fine powder 25 is dispersed in the formed metal line 24 including the contact hole 23.
    2B is a cross-sectional view in which the plug 26 is formed by embedding the dispersed fine powder in the contact hole 23.
    FIG. 2C is a cross-sectional view of forming the metal layer 27 by dispersing and filling the fine powder in order to form a plug 26 by filling the fine powder into the contact hole and forming another metal layer on the entire structure.
    Another embodiment of the present invention can be applied to the method shown in Figures 2a to 2c to form a metal wiring at the same time as the contact hole buried, and also to deposit the metal layer by using the PVD method step by step after filling the contact hole By performing heat treatment, the metal wiring can be formed.
    As described above, in the case of metal wiring using fine powder, a small contact hole may be easily buried first. Particularly, the weak magnetic field makes it easy to deposit fine powder inside the contact hole, thus ensuring proper step coverage even in deep contacts, and exhibiting sufficient filling effects even when the contact hole is completely filled. have. In addition, when the fine powder is used, the powder is suspended and difficult to deposit, but can be sufficiently filled by applying a magnetic field, and can be completely filled using vibration. Later, when the layer is formed by sputtering step by step, it is difficult to fill the contact by sputtering method, but it is easy to form a complete layer because the deposition on the plane is very easy and strong bonding. There is an advantage to losing. In addition, it is very advantageous in terms of throughput since the powder can be layered through the heat treatment process and the thermal process can be performed after the metal wiring is embedded.
    权利要求:
    Claims (6)
    [1" claim-type="Currently amended] Dispersing fine powder in a contact hole formed in the device and a portion necessary for wiring;
    Heat treating the fine powder to a melting point temperature to form a metal film;
    Cooling the metal film to form metal wires.
    [2" claim-type="Currently amended] The method of claim 1,
    The metal wiring is formed by applying vibration to the metal wiring forming method of a semiconductor device.
    [3" claim-type="Currently amended] The method of claim 1,
    And forming a barrier metal layer by applying a magnetic field instead of the metal wiring.
    [4" claim-type="Currently amended] Forming a contact hole in the device and then forming metal wiring on top of the entire structure including the contact hole;
    Dispersing fine powder in the contact hole;
    And embedding the fine powder in the contact hole to form a plug, and then forming a metal layer on the plug and the metal wiring.
    [5" claim-type="Currently amended] The method of claim 4, wherein
    The metal wiring is formed by using a CVD, PVD process or a process of heat treatment after dispersing fine powder.
    [6" claim-type="Currently amended] The method of claim 4, wherein
    The metal layer is formed using a CVD, PVD process or a process of heat treatment after dispersing fine powder.
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    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1996-12-27|Application filed by 김영환, 현대전자산업 주식회사
    1996-12-27|Priority to KR1019960073618A
    1998-09-25|Publication of KR19980054455A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019960073618A|KR19980054455A|1996-12-27|1996-12-27|Metal wiring formation method of semiconductor device|
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